Stamps for nanoimprint lithography by extreme ultraviolet interference lithography
نویسندگان
چکیده
منابع مشابه
Extreme ultraviolet interference lithography with incoherent light
In order to address the crucial problem of high-resolution low line-edge roughness resist for extreme ultraviolet (EUV) lithography, researchers require significant levels of access to high-resolution EUV exposure tools. The prohibitively high cost of such tools, even microfield tools, has greatly limited this availability and arguably hindered progress in the area of EUV resists. To address th...
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Although an extensive number of publications have been reported on nanoimprint lithography (NIL) techniques, the ability of NIL for three-dimensional (3-D) patterning has not been fully addressed in terms of the mold fabrication and imprint processes. Developing technologies for patterning 3-D and multilevel features are important because they eliminate multiple steps and complex interlevel ali...
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Nanoimprint lithography (NIL) is a promising nanomanufacturing technology that offers an alternative to traditional photolithography for manufacturing next-generation semiconductor devices. This technology involves coating an ultraviolet (UV)-curable monomer layer on the substrate and then imprinting it with a template containing topography corresponding to the desired substrate features. While...
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Nowadays, nanodevices like small fluidic channels, semiconductor lasers, nano contacts for solar cells, nano magnets or nano antennas for infrared detection (THz) are of great interest. The applications for these devices extend the fields of e.g. energy, computational or medical sciences. For example, by arranging nano dots consisting of a magnetic material, logical circuits can be designed whi...
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The Nanoimprint lithography (NIL) is a novel method of fabricating micro/nanometer scale patterns with low cost, high throughput and high resolution (Chou et al., 1996). Unlike traditionally optical lithographic approaches, which create pattern through the use of photons or electrons to modify the chemical and physical properties of the resist, NIL relies on direct mechanical deformation of the...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
سال: 2004
ISSN: 0734-211X
DOI: 10.1116/1.1828087